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HN1C01FU-Y(T5L,F,T

Toshiba Semiconductor and Storage

HN1C01FU-Y(T5L,F,T

Arrays BJT Transistors

In StockRoHS: Compliant

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Compliant

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Specifications

Pin Sayısı
6
Montaj Tipi
Surface Mount
Dc Current Gain Hfe Min Ic Vce
120 @ 2mA 6V
RoHS Durumu
RoHS Compliant
Yayın Yılı
2014
Nem Hassasiyeti (MSL)
1 (Unlimited)
Collector Emitter Voltage Vceo
250mV
Parça Durumu
Active
Vce Saturation Max Ib Ic
250mV @ 10mA, 100mA
Montaj
Surface Mount
Kılıf / Paket
6-TSSOP, SC-88, SOT-363
Radyasyon Dayanımı
No
Max Collector Current
150mA
Collectoremitter Breakdown Voltage
50V
Transistor Type
2 NPN (Dual)
Çalışma Sıcaklığı
125°C TJ
Current Collector Cutoff Max
100nA ICBO
Power Max
200mW
Max Breakdown Voltage
50V
Frequency Transition
80MHz
Max Power Dissipation
200mW
Collector Base Voltage Vcbo
60V
Ambalaj
Tape & Reel (TR)

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