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C3 ChipZentronix
HN1C01FU-GR,LF

Toshiba Semiconductor and Storage

HN1C01FU-GR,LF

Arrays BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.24
  • 10+ pcs$0.23
  • 100+ pcs$0.22
  • 500+ pcs$0.21

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Specifications

Transistor Type
2 NPN (Dual)
Collectoremitter Breakdown Voltage
50V
Çalışma Sıcaklığı
125°C TJ
Fabrika Tedarik Süresi
12 Weeks
Radyasyon Dayanımı
No
Kılıf / Paket
6-TSSOP, SC-88, SOT-363
Max Collector Current
150mA
Max Power Dissipation
200mW
Ambalaj
Cut Tape (CT)
Collector Base Voltage Vcbo
60V
Current Collector Cutoff Max
100nA ICBO
Max Breakdown Voltage
50V
Power Max
200mW
Frequency Transition
80MHz
Nem Hassasiyeti (MSL)
1 (Unlimited)
RoHS Durumu
RoHS Compliant
Yayın Yılı
2014
Collector Emitter Voltage Vceo
250mV
Dc Current Gain Hfe Min Ic Vce
200 @ 2mA 6V
Montaj Tipi
Surface Mount
Pin Sayısı
6
Montaj
Surface Mount
Vce Saturation Max Ib Ic
250mV @ 10mA, 100mA
Parça Durumu
Discontinued

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