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HN1B01FU-Y(L,F,T)

Toshiba Semiconductor and Storage

HN1B01FU-Y(L,F,T)

Arrays BJT Transistors

In StockRoHS: Compliant

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Specifications

Collectoremitter Breakdown Voltage
50V
Transistor Type
NPN, PNP
Currentcollector Ic Max
150mA
Çalışma Sıcaklığı
125°C TJ
Kılıf / Paket
6-TSSOP, SC-88, SOT-363
Max Collector Current
150mA
Max Power Dissipation
200mW
Ambalaj
Tape & Reel (TR)
Current Collector Cutoff Max
100nA ICBO
Max Breakdown Voltage
50V
Power Max
200mW
Voltage Collector Emitter Breakdown Max
50V
Tedarikçi Cihaz Paketi
US6
Frequency Transition
120MHz
RoHS Durumu
RoHS Compliant
Yayın Yılı
2014
Nem Hassasiyeti (MSL)
1 (Unlimited)
Collector Emitter Voltage Vceo
300mV
Dc Current Gain Hfe Min Ic Vce
120 @ 2mA 6V
Montaj Tipi
Surface Mount
Montaj
Surface Mount
Parça Durumu
Active
Vce Saturation Max Ib Ic
300mV @ 10mA, 100mA

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