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C3 ChipZentronix
HN1A01F-GR(TE85L,F

Toshiba Semiconductor and Storage

HN1A01F-GR(TE85L,F

Arrays BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.08
  • 10+ pcs$0.08
  • 100+ pcs$0.08
  • 500+ pcs$0.07

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RoHS

Compliant

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Specifications

Emitter Base Voltage Vebo
5V
Pin Sayısı
6
Collector Emitter Voltage Vceo
300mV
Gain Bandwidth Product
80MHz
Yayın Yılı
2014
Hfemin
120
Max Breakdown Voltage
50V
Ambalaj
Cut Tape (CT)
Collector Base Voltage Vcbo
50V
Element Configuration
Dual
Max Power Dissipation
300mW
Max Collector Current
150mA
Polarity
PNP
Vce Saturation Max Ib Ic
300mV @ 10mA, 100mA
Parça Durumu
Discontinued
Collectoremitter Saturation Voltage
100mV
Montaj
Surface Mount
Dc Current Gain Hfe Min Ic Vce
200 @ 2mA 6V
Montaj Tipi
Surface Mount
Nem Hassasiyeti (MSL)
1 (Unlimited)
RoHS Durumu
RoHS Compliant
Power Max
300mW
Current Collector Cutoff Max
100nA ICBO
Kılıf / Paket
SC-74, SOT-457
Çalışma Sıcaklığı
125°C TJ
Fabrika Tedarik Süresi
4 Weeks
Transistor Type
2 PNP (Dual)
Collectoremitter Breakdown Voltage
50V

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