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Toshiba Semiconductor and Storage

GT50JR22(STA1,E,S)

Single IGBTs

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$1.52
  • 10+ pcs$1.43
  • 100+ pcs$1.35
  • 500+ pcs$1.28

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Same-day dispatch from stock

Genuine parts

Verified sourcing

RoHS

Compliant

Support

Technical team support

Specifications

Maximum Gate Emitter Voltage
- 25 V, + 25 V
Collectoremitter Saturation Voltage
1.55
Maks. Çalışma Sıcaklığı
175 °C
Ürün Tipi
IGBT Transistors
Giriş Tipi
Standard
Element Configuration
Single
Ürün Durumu
Active
Continuous Collector Current
50
Collector Emitter Voltage Vceo
600 V
Voltage Collector Emitter Breakdown Max
600 V
Montaj Stili
Through Hole
Çalışma Sıcaklığı
175°C (TJ)
Montaj Tipi
Through Hole
Configuration
Single
Maks. Çalışma Sıcaklığı
+ 175 C
Minimum Operating Temperature
- 55 C
Fabrika Paket Adedi
25
Currentcollector Ic Max
50 A
Pin Sayısı
3
Tedarikçi Cihaz Paketi
TO-3P(N)
Vceon Max Vge Ic
2.2V @ 15V, 50A
Max Collector Current
50 A
Continuous Collector Current At25 C
50 A
Montaj
Through Hole
Paket
Tube
Power Dissipation
230
Current Collector Pulsed Icm
100 A
Power Max
230 W
Pd Power Dissipation
230 W
Kılıf / Paket
TO-3P-3, SC-65-3
Birim Ağırlık
0.162260 oz
Kurşunsuz
Lead Free
Technology
Si
Ambalaj
Tube
RoHS
Compliant
Collector Emitter Voltage Vceo Max
600 V
Min. Çalışma Sıcaklığı
-55 °C

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