Volume pricing
- 1+ pcs$2.98
- 10+ pcs$2.81
- 100+ pcs$2.65
- 500+ pcs$2.50
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Collectoremitter Saturation Voltage
- 1.6 V
- Maximum Gate Emitter Voltage
- - 25 V, + 25 V
- Ürün Durumu
- Active
- REACH Uyumluluk Kodu
- unknown
- Ürün Tipi
- IGBT Transistors
- Giriş Tipi
- Standard
- Montaj Stili
- Through Hole
- Çalışma Sıcaklığı
- 175°C (TJ)
- Voltage Collector Emitter Breakdown Max
- 600 V
- Üretici Parça No
- GT50J341,Q
- Maks. Çalışma Sıcaklığı
- + 175 C
- Minimum Operating Temperature
- - 55 C
- Fabrika Paket Adedi
- 50
- Configuration
- Single
- Package Description
- ,
- Montaj Tipi
- Through Hole
- Continuous Collector Current Ic Max
- 100 A
- Ihs Manufacturer
- TOSHIBA CORP
- Currentcollector Ic Max
- 50 A
- Vceon Max Vge Ic
- 2.2V @ 15V, 50A
- Continuous Collector Current At25 C
- 50 A
- Tedarikçi Cihaz Paketi
- TO-3P(N)
- Current Collector Pulsed Icm
- 100 A
- Power Max
- 200 W
- Pd Power Dissipation
- 200 W
- Risk Rank
- 5.67
- Paket
- Tube
- Ambalaj
- Tube
- Part Life Cycle Code
- Active
- Technology
- Si
- Collector Emitter Voltage Vceo Max
- 600 V
- RoHS
- Details
- Kılıf / Paket
- TO-3P-3, SC-65-3
- Fabrika Tedarik Süresi
- 12 Weeks
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