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C3 ChipZentronix

Toshiba Semiconductor and Storage

GT50J121(Q)

Single IGBTs

In StockRoHS: Compliant

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RoHS

Compliant

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Specifications

Radyasyon Dayanımı
No
Current Collector Pulsed Icm
100A
Çalışma Sıcaklığı
150°C TJ
Power Max
240W
Collector Emitter Voltage Vceo
600V
Collectoremitter Breakdown Voltage
600V
Test Conditions
300V, 50A, 13 Ω, 15V
Td Onoff25c
90ns/300ns
Montaj
Through Hole
Ambalaj
Tube
Switching Energy
1.3mJ (on), 1.34mJ (off)
Montaj Tipi
Through Hole
Kılıf / Paket
TO-3PL
Kurşunsuz
Lead Free
Parça Durumu
Obsolete
Pin Sayısı
3
Nem Hassasiyeti (MSL)
1 (Unlimited)
RoHS Durumu
RoHS Compliant
Max Collector Current
50A
Vceon Max Vge Ic
2.45V @ 15V, 50A
Yayın Yılı
2006
Max Power Dissipation
240W
Element Configuration
Single
Giriş Tipi
Standard

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