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Toshiba Semiconductor and Storage

GT30J341,Q

Single IGBTs

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$2.36
  • 10+ pcs$2.22
  • 100+ pcs$2.10
  • 500+ pcs$1.98

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Same-day dispatch from stock

Genuine parts

Verified sourcing

RoHS

Compliant

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Specifications

Çalışma Sıcaklığı
175°C (TJ)
Paket
Tray
Ambalaj
Tray
Configuration
Single
REACH Uyumluluk Kodu
unknown
Continuous Collector Current Ic Max
120 A
Montaj Tipi
Through Hole
Ürün Tipi
IGBT Transistors
RoHS
Details
Fabrika Tedarik Süresi
12 Weeks
Temel Ürün No
GT30J341
Part Life Cycle Code
Active
Switching Energy
800μJ (on), 600μJ (off)
Current Collector Pulsed Icm
120 A
Currentcollector Ic Max
59 A
Montaj Stili
Through Hole
Td Onoff25c
80ns/280ns
Maks. Çalışma Sıcaklığı
+ 175 C
Risk Rank
5.67
Giriş Tipi
Standard
Ürün Durumu
Active
Ihs Manufacturer
TOSHIBA CORP
Technology
Si
Test Conditions
300V, 30A, 24Ohm, 15V
Power Max
230 W
Voltage Collector Emitter Breakdown Max
600 V
Collectoremitter Saturation Voltage
1.5 V
Continuous Collector Current At25 C
59 A
Maximum Gate Emitter Voltage
- 25 V, + 25 V
Reverse Recovery Time Trr
50 ns
Collector Emitter Voltage Vceo Max
600 V
Minimum Operating Temperature
- 55 C
Tedarikçi Cihaz Paketi
TO-3P(N)
Kılıf / Paket
TO-3P-3, SC-65-3
Üretici Parça No
GT30J341,Q
Package Description
,
Vceon Max Vge Ic
2V @ 15V, 30A
Fabrika Paket Adedi
100
Pd Power Dissipation
230 W

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