GT20J341,S4X(S

Specifications

Maks. Çalışma Sıcaklığı

+ 150 C

Td Onoff25c

60ns/240ns

Gateemitter Voltagemax

25 V

Risk Rank

2.3

Ihs Manufacturer

TOSHIBA CORP

Operating Temperature Classification

Military

Gate To Emitter Voltage Max

±25(V)

Current Collector Pulsed Icm

80 A

Switching Energy

500μJ (on), 400μJ (off)

ECCN Kodu

EAR99

Currentcollector Ic Max

20 A

Ürün Tipi

IGBT Transistors

Channel Type

N

Operating Temperature Min

-55C

Part Life Cycle Code

Active

Package Type

TO-220SIS

Rohs Code

Yes

Çalışma Sıcaklığı

150°C (TJ)

Configuration

Single

REACH Uyumluluk Kodu

unknown

Collectoremitter Voltagemax

600 V

Continuous Collector Current Ic Max

80 A

Fabrika Paket Adedi

50

Pd Power Dissipation

45 W

Operating Temperature Max

150C

Vceon Max Vge Ic

2V @ 15V, 20A

Rad Hardened

No

Collector Emitter Voltage Vceo Max

600 V

Continuous Collector Current

20

Collectoremitter Saturation Voltage

1.5

Mounting

Through Hole

Maximum Gate Emitter Voltage

- 25 V, + 25 V

Collector Current Dc

20(A)

Technology

Si

Pin Sayısı

3 +Tab

Operating Temperaturemax

150 °C

Ürün Durumu

Active

Power Dissipationmax Abs

45 W

Giriş Tipi

Standard

Montaj Stili

Through Hole