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3SK291(TE85L,F)

Toshiba Semiconductor and Storage

3SK291(TE85L,F)

RF MOSFETs Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.37
  • 10+ pcs$0.35
  • 100+ pcs$0.33
  • 500+ pcs$0.31

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Specifications

Drain Currentmax Abs Id
0.03A
Continuous Drain Current Id
30mA
Voltage Test
6V
Drain To Source Voltage Vdss
12.5V
Transistor Type
N-Channel Dual Gate
Kılıf / Paket
SC-61AA
Gain
22.5dB
Pin Sayısı
4
Operating Temperature Max
125°C
RoHS Durumu
RoHS Compliant
Max Power Dissipation
150mW
Noise Figure
2.5dB
Parça Durumu
Active
Yüzey Montaj
YES
Fabrika Tedarik Süresi
52 Weeks
Nem Hassasiyeti (MSL)
1 (Unlimited)
Yayın Yılı
2009
Current Test
10mA
Fet Technology
METAL-OXIDE SEMICONDUCTOR
Configuration
Single
Akım Değeri
30mA
Frekans
800MHz
Ambalaj
Cut Tape (CT)

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