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2SK209-BL(TE85L,F)

Toshiba Semiconductor and Storage

2SK209-BL(TE85L,F)

RF MOSFETs Transistors

RoHS: Compliant

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Specifications

Ambalaj
Cut Tape (CT)
Weight
7.994566mg
Terminal Formu
GULL WING
Yayın Yılı
2009
Element Configuration
Single
Maks. Çalışma Sıcaklığı
125°C
Max Power Dissipation
150mW
Kılıf / Paket
TO-236-3, SC-59, SOT-23-3
Nem Hassasiyeti (MSL)
1 (Unlimited)
Transistor Application
AMPLIFIER
Voltage Test
10V
Transistor Type
N-Channel JFET
Continuous Drain Current Id
14mA
Fabrika Tedarik Süresi
52 Weeks
Noise Figure
1dB
Terminal Sayısı
3
RoHS Durumu
RoHS Compliant
Current Test
500μA
Frekans
1kHz
Operating Mode
DEPLETION MODE
Radyasyon Dayanımı
No
Fet Technology
JUNCTION
Min. Çalışma Sıcaklığı
-55°C
Montaj
Surface Mount
Contact Plating
Copper, Silver, Tin
Number Of Elements
1
Terminal Pozisyonu
DUAL
Parça Durumu
Active
Pin Sayısı
3

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