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2SC5095-O(TE85L,F)

Toshiba Semiconductor and Storage

2SC5095-O(TE85L,F)

RF BJT Transistors

In StockRoHS: Compliant

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Specifications

RoHS Durumu
RoHS Compliant
Power Dissipation
100mW
Montaj Tipi
Surface Mount
Radyasyon Dayanımı
No
Ambalaj
Cut Tape (CT)
Parça Durumu
Active
Transistor Type
NPN
Contact Plating
Silver, Tin
Gain
13dB ~ 7dB
Collector Emitter Voltage Vceo
10V
Montaj
Surface Mount
Collector Base Voltage Vcbo
20V
Kılıf / Paket
SC-70, SOT-323
Çalışma Sıcaklığı
125°C TJ
Polaritychannel Type
NPN
Element Configuration
Single
Number Of Elements
1
Fabrika Tedarik Süresi
16 Weeks
Yayın Yılı
2009
Max Collector Current
15mA
Dc Current Gain Hfe Min Ic Vce
80 @ 7mA 6V
Pin Sayısı
3
Gain Bandwidth Product
10 GHz
Frekans
10GHz
Max Power Dissipation
100mW
Nem Hassasiyeti (MSL)
1 (Unlimited)
Emitter Base Voltage Vebo
1.5V
Hfemin
50
Collectoremitter Breakdown Voltage
10V
Noise Figure Db Typ F
1.8dB @ 2GHz
ECCN Kodu
EAR99
Transition Frequency
7000MHz
Max Breakdown Voltage
10V

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