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2SC5087YTE85LF

Toshiba Semiconductor and Storage

2SC5087YTE85LF

RF BJT Transistors

In StockRoHS: Compliant

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Specifications

Çalışma Sıcaklığı
125°C TJ
Polaritychannel Type
NPN
Kılıf / Paket
SC-61AA
Element Configuration
Single
Dc Current Gain Hfe Min Ic Vce
120 @ 20mA 10V
Max Collector Current
80mA
Yayın Yılı
2014
Fabrika Tedarik Süresi
11 Weeks
RoHS Durumu
RoHS Compliant
Parça Durumu
Active
Transistor Type
NPN
Montaj Tipi
Surface Mount
Ambalaj
Cut Tape (CT)
Gain
13dB
Collector Emitter Voltage Vceo
12V
Collector Base Voltage Vcbo
20V
Montaj
Surface Mount
Power Max
150mW
Collectoremitter Breakdown Voltage
12V
Hfemin
80
Emitter Base Voltage Vebo
3V
Noise Figure Db Typ F
1.1dB @ 1GHz
Transition Frequency
5000MHz
ECCN Kodu
EAR99
Max Breakdown Voltage
12V
Gain Bandwidth Product
7 GHz
Max Power Dissipation
150mW
Nem Hassasiyeti (MSL)
1 (Unlimited)

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