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2SC5087R(TE85L,F)

Toshiba Semiconductor and Storage

2SC5087R(TE85L,F)

RF BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.51
  • 10+ pcs$0.48
  • 100+ pcs$0.46
  • 500+ pcs$0.43

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RoHS

Compliant

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Specifications

Nem Hassasiyeti (MSL)
1 (Unlimited)
Max Power Dissipation
150mW
Frekans
8GHz
Continuous Collector Current
80mA
Pin Sayısı
4
Max Breakdown Voltage
12V
Transition Frequency
6000MHz
Noise Figure Db Typ F
1.1dB ~ 2dB @ 1GHz
Collectoremitter Breakdown Voltage
12V
Hfemin
120
Emitter Base Voltage Vebo
3V
Collector Base Voltage Vcbo
20V
Montaj
Surface Mount
REACH Uyumluluk Kodu
unknown
Collector Emitter Voltage Vceo
12V
Parça Durumu
Active
Transistor Type
NPN
Montaj Tipi
Surface Mount
Ambalaj
Tape & Reel (TR)
RoHS Durumu
RoHS Compliant
Dc Current Gain Hfe Min Ic Vce
120 @ 20mA 10V
Max Collector Current
80mA
Yayın Yılı
2011
Element Configuration
Single
Polaritychannel Type
NPN
Çalışma Sıcaklığı
125°C TJ
Kılıf / Paket
SC-61AA

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