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2SC5085-Y(TE85L,F)

Toshiba Semiconductor and Storage

2SC5085-Y(TE85L,F)

RF BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.30
  • 10+ pcs$0.28
  • 100+ pcs$0.26
  • 500+ pcs$0.25

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RoHS

Compliant

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Specifications

Collector Base Voltage Vcbo
20V
Power Max
100mW
Montaj
Surface Mount
Collector Emitter Voltage Vceo
12V
Gain
11dB ~ 16.5dB
Parça Durumu
Active
Transistor Type
NPN
Ambalaj
Cut Tape (CT)
Montaj Tipi
Surface Mount
RoHS Durumu
RoHS Compliant
Dc Current Gain Hfe Min Ic Vce
120 @ 20mA 10V
Max Collector Current
80mA
Yayın Yılı
2011
Fabrika Tedarik Süresi
16 Weeks
Element Configuration
Single
Çalışma Sıcaklığı
125°C TJ
Polaritychannel Type
NPN
Kılıf / Paket
SC-70, SOT-323
Nem Hassasiyeti (MSL)
1 (Unlimited)
Max Power Dissipation
100mW
Gain Bandwidth Product
7 GHz
Max Breakdown Voltage
12V
Transition Frequency
5000MHz
Noise Figure Db Typ F
1.1dB @ 1GHz
Collectoremitter Breakdown Voltage
12V
Emitter Base Voltage Vebo
3V
Hfemin
80

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