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2SC5084YTE85LF

Toshiba Semiconductor and Storage

2SC5084YTE85LF

RF BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.25
  • 10+ pcs$0.23
  • 100+ pcs$0.22
  • 500+ pcs$0.21

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RoHS

Compliant

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Specifications

Noise Figure Db Typ F
1.1dB @ 1GHz
Hfemin
80
Emitter Base Voltage Vebo
3V
Collectoremitter Breakdown Voltage
12V
Max Breakdown Voltage
12V
ECCN Kodu
EAR99
Transition Frequency
5000MHz
Max Power Dissipation
150mW
Gain Bandwidth Product
7 GHz
Nem Hassasiyeti (MSL)
1 (Unlimited)
Kılıf / Paket
TO-236-3, SC-59, SOT-23-3
Polaritychannel Type
NPN
Çalışma Sıcaklığı
125°C TJ
Yayın Yılı
2014
Fabrika Tedarik Süresi
7 Weeks
Dc Current Gain Hfe Min Ic Vce
120 @ 20mA 10V
Max Collector Current
80mA
Element Configuration
Single
Montaj Tipi
Surface Mount
Ambalaj
Cut Tape (CT)
Transistor Type
NPN
Parça Durumu
Discontinued
RoHS Durumu
RoHS Compliant
Montaj
Surface Mount
REACH Uyumluluk Kodu
unknown
Power Max
150mW
Collector Base Voltage Vcbo
20V
Gain
11dB
Collector Emitter Voltage Vceo
12V

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