Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Element Configuration
- Single
- Transistor Application
- AMPLIFIER
- Number Of Elements
- 1
- Yayın Yılı
- 2014
- Fabrika Tedarik Süresi
- 12 Weeks
- Dc Current Gain Hfe Min Ic Vce
- 80 @ 20mA 10V
- Max Collector Current
- 80mA
- Terminal Sayısı
- 3
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Çalışma Sıcaklığı
- 125°C TJ
- Polaritychannel Type
- NPN
- Kurşunsuz Kodu
- yes
- Gain
- 11dB
- Collector Emitter Voltage Vceo
- 12V
- REACH Uyumluluk Kodu
- unknown
- Montaj
- Surface Mount
- Power Max
- 150mW
- Collector Base Voltage Vcbo
- 20V
- RoHS Durumu
- RoHS Compliant
- Montaj Tipi
- Surface Mount
- Ambalaj
- Cut Tape (CT)
- Parça Durumu
- Active
- Transistor Type
- NPN
- Highest Frequency Band
- ULTRA HIGH FREQUENCY B
- Transition Frequency
- 7000MHz
- Max Breakdown Voltage
- 12V
- Additional Feature
- LOW NOISE
- Hfemin
- 80
- Emitter Base Voltage Vebo
- 3V
- Collectoremitter Breakdown Voltage
- 12V
- Terminal Pozisyonu
- DUAL
- Noise Figure Db Typ F
- 1.1dB @ 1GHz
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Formu
- GULL WING
- Transistor Element Material
- SILICON
- Collectorbase Capacitancemax
- 1.15pF
- Gain Bandwidth Product
- 7 GHz
- Max Power Dissipation
- 150mW
- Jesd30 Code
- R-PDSO-G3
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