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2SC5065-Y(TE85L,F)

Toshiba Semiconductor and Storage

2SC5065-Y(TE85L,F)

RF BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.27
  • 10+ pcs$0.26
  • 100+ pcs$0.24
  • 500+ pcs$0.23

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RoHS

Compliant

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Specifications

Gain
12dB ~ 17dB
Contact Plating
Copper, Silver, Tin
Collector Emitter Voltage Vceo
12V
Collector Base Voltage Vcbo
20V
REACH Uyumluluk Kodu
unknown
Montaj
Surface Mount
Power Max
100mW
RoHS Durumu
RoHS Compliant
Parça Durumu
Active
Transistor Type
NPN
Montaj Tipi
Surface Mount
Ambalaj
Cut Tape (CT)
Element Configuration
Single
Frequency Transition
7GHz
Dc Current Gain Hfe Min Ic Vce
120 @ 10mA 5V
Max Collector Current
30mA
Fabrika Tedarik Süresi
16 Weeks
Yayın Yılı
2009
Çalışma Sıcaklığı
125°C TJ
Kılıf / Paket
SC-70, SOT-323
Nem Hassasiyeti (MSL)
1 (Unlimited)
Max Power Dissipation
100mW
Max Breakdown Voltage
12V
Collectoremitter Breakdown Voltage
12V
Hfemin
80
Emitter Base Voltage Vebo
3V
Noise Figure Db Typ F
1.1dB @ 1GHz

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