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2SC4215-Y(TE85L,F)

Toshiba Semiconductor and Storage

2SC4215-Y(TE85L,F)

RF BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.33
  • 10+ pcs$0.31
  • 100+ pcs$0.30
  • 500+ pcs$0.28

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RoHS

Compliant

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Specifications

Max Breakdown Voltage
30V
Max Collector Current
20mA
Transistor Type
NPN
Element Configuration
Single
Montaj Tipi
Surface Mount
Number Of Elements
1
Max Power Dissipation
100mW
Noise Figure Db Typ F
2dB ~ 5dB @ 100MHz
Nem Hassasiyeti (MSL)
1 (Unlimited)
Gain Bandwidth Product
550MHz
Frekans
550MHz
Dc Current Gain Hfe Min Ic Vce
100 @ 1mA 6V
Radyasyon Dayanımı
No
Pin Sayısı
3
Collectoremitter Breakdown Voltage
30V
Contact Plating
Silver, Tin
Hfemin
40
ECCN Kodu
EAR99
Montaj
Surface Mount
Parça Durumu
Active
Fabrika Tedarik Süresi
16 Weeks
Çalışma Sıcaklığı
125°C TJ
Emitter Base Voltage Vebo
4V
Collector Emitter Voltage Vceo
30V
Ambalaj
Cut Tape (CT)
Power Dissipation
100mW
Collector Base Voltage Vcbo
40V
Gain
17dB ~ 23dB
Yayın Yılı
2009
Polaritychannel Type
NPN
Kılıf / Paket
SC-70, SOT-323
RoHS Durumu
RoHS Compliant
Transition Frequency
260MHz

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