Volume pricing
- 1+ pcs$0.05
- 10+ pcs$0.05
- 100+ pcs$0.04
- 500+ pcs$0.04
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Gain Bandwidth Product
- 550MHz
- Noise Figure Db Typ F
- 2.5dB @ 100MHz
- Dc Current Gain Hfe Min Ic Vce
- 100 @ 1mA 6V
- Max Collector Current
- 20mA
- Transistor Type
- NPN
- Element Configuration
- Single
- Terminal Formu
- GULL WING
- Max Breakdown Voltage
- 30V
- Max Power Dissipation
- 100mW
- Montaj Tipi
- Surface Mount
- Number Of Elements
- 1
- Yayın Yılı
- 2011
- Gain
- 23dB
- Terminal Pozisyonu
- DUAL
- Continuous Collector Current
- 20mA
- Terminal Sayısı
- 3
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- RoHS Durumu
- RoHS Compliant
- Transition Frequency
- 550MHz
- Polaritychannel Type
- NPN
- Transistor Element Material
- SILICON
- Parça Durumu
- Active
- Montaj
- Surface Mount
- Collectoremitter Breakdown Voltage
- 30V
- Hfemin
- 40
- Jesd30 Code
- R-PDSO-G3
- Highest Frequency Band
- VERY HIGH FREQUENCY B
- Collector Emitter Voltage Vceo
- 30V
- Ambalaj
- Cut Tape (CT)
- Collector Base Voltage Vcbo
- 40V
- Emitter Base Voltage Vebo
- 4V
- Çalışma Sıcaklığı
- 125°C TJ
- Fabrika Tedarik Süresi
- 12 Weeks
- Transistor Application
- AMPLIFIER
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