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2SA1618-Y(TE85L,F)

Toshiba Semiconductor and Storage

2SA1618-Y(TE85L,F)

Arrays BJT Transistors

RoHS: Compliant

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Specifications

Vce Saturation Max Ib Ic
300mV @ 10mA, 100mA
Dc Current Gain Hfe Min Ic Vce
120 @ 2mA 6V
Max Power Dissipation
300mW
Ambalaj
Tape & Reel (TR)
Montaj
Surface Mount
Nem Hassasiyeti (MSL)
1 (Unlimited)
Fabrika Tedarik Süresi
12 Weeks
Current Collector Cutoff Max
100nA ICBO
Power Max
300mW
Collectoremitter Breakdown Voltage
50V
Montaj Tipi
Surface Mount
Çalışma Sıcaklığı
125°C TJ
Max Collector Current
150mA
Max Breakdown Voltage
50V
Transistor Type
2 PNP (Dual) Matched Pair, Common Emitter
Frequency Transition
80MHz
RoHS Durumu
RoHS Compliant
Collector Emitter Voltage Vceo
300mV
Kılıf / Paket
SC-74A, SOT-753
Yayın Yılı
2014
Parça Durumu
Active

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