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2SA1618-GR(TE85L,F

Toshiba Semiconductor and Storage

2SA1618-GR(TE85L,F

Arrays BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.25
  • 10+ pcs$0.24
  • 100+ pcs$0.22
  • 500+ pcs$0.21

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RoHS

Compliant

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Specifications

Emitter Base Voltage Vebo
-5V
Vce Saturation Max Ib Ic
300mV @ 10mA, 100mA
Dc Current Gain Hfe Min Ic Vce
200 @ 2mA 6V
Gain Bandwidth Product
80MHz
Power Max
300mW
Collector Base Voltage Vcbo
-50V
Hfemin
200
Collector Emitter Voltage Vceo
300mV
Transition Frequency
80MHz
Max Power Dissipation
300mW
Ambalaj
Cut Tape (CT)
Montaj
Surface Mount
Nem Hassasiyeti (MSL)
1 (Unlimited)
Collectoremitter Breakdown Voltage
50V
Current Collector Cutoff Max
100nA ICBO
Max Breakdown Voltage
50V
Max Collector Current
150mA
Montaj Tipi
Surface Mount
Çalışma Sıcaklığı
125°C TJ
Element Configuration
Dual
Kılıf / Paket
SC-74A, SOT-753
Yayın Yılı
2014
RoHS Durumu
RoHS Compliant
Polarity
PNP
Parça Durumu
Discontinued
Transistor Type
2 PNP (Dual) Matched Pair, Common Emitter

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