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1SS383(TE85L,F)

Toshiba Semiconductor and Storage

1SS383(TE85L,F)

Rectifier Diode Array

RoHS: Compliant

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Specifications

Voltage Forward Vf Max If
600mV @ 100mA
Current Reverse Leakage Vr
5μA @ 40V
Maks. Çalışma Sıcaklığı
100°C
Montaj Tipi
Surface Mount
Ambalaj
Cut Tape (CT)
Diode Configuration
2 Independent
Pin Sayısı
82
Fabrika Tedarik Süresi
11 Weeks
Max Repetitive Reverse Voltage Vrrm
45V
Diode Type
Schottky
Nem Hassasiyeti (MSL)
1 (Unlimited)
Forward Current
100mA
Element Configuration
Dual
Max Forward Surge Current Ifsm
1A
Kılıf / Paket
SC-82
Max Power Dissipation
100mW
RoHS Durumu
RoHS Compliant
Reverse Currentmax
5μA
Average Rectified Current
100mA
Peak Nonrepetitive Surge Current
1A
Min. Çalışma Sıcaklığı
-40°C
Operating Temperature Junction
125°C Max
Parça Durumu
Active
Yayın Yılı
2009
Max Reverse Voltage Dc
40V
Radyasyon Dayanımı
No
Speed
Small Signal =< 200mA (Io), Any Speed
Montaj
Surface Mount

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