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1SS361FV,L3F

Toshiba Semiconductor and Storage

1SS361FV,L3F

Rectifier Diode Array

RoHS: Compliant

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Specifications

Forward Current
100mA
Nem Hassasiyeti (MSL)
1 (Unlimited)
Element Configuration
Common Cathode
Kılıf / Paket
SOT-723
Max Power Dissipation
150mW
Average Rectified Current
100mA
RoHS Durumu
RoHS Compliant
Parça Durumu
Active
Operating Temperature Junction
150°C Max
Max Reverse Voltage Dc
80V
Output Currentmax
0.1A
Reverse Voltage Dc
80V
Peak Nonrepetitive Surge Current
2A
Min. Çalışma Sıcaklığı
-55°C
Terminal Formu
FLAT
Peak Reverse Current
500nA
Montaj
Surface Mount
Max Surge Current
2A
Recovery Time
1.6 ns
Speed
Small Signal =< 200mA (Io), Any Speed
Montaj Tipi
Surface Mount
Voltage Forward Vf Max If
1.2V @ 100mA
Current Reverse Leakage Vr
500nA @ 80V
Maks. Çalışma Sıcaklığı
150°C
Reverse Recovery Time
4 ns
Diode Configuration
1 Pair Common Cathode
Number Of Elements
2
Ambalaj
Tape & Reel (TR)
Terminal Sayısı
3
Pin Sayısı
3
Forward Voltage
900mV
Fabrika Tedarik Süresi
16 Weeks
Terminal Pozisyonu
DUAL
Max Repetitive Reverse Voltage Vrrm
85V
Diode Element Material
SILICON
Diode Type
Standard

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