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1SS309(TE85L,F)

Toshiba Semiconductor and Storage

1SS309(TE85L,F)

Rectifier Diode Array

RoHS: Compliant

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Specifications

Peak Nonrepetitive Surge Current
2A
Temel Parça No
1SS309
Min. Çalışma Sıcaklığı
-55°C
Yayın Yılı
2009
Max Reverse Voltage Dc
80V
Operating Temperature Junction
125°C Max
Parça Durumu
Active
Recovery Time
4 ns
Speed
Small Signal =< 200mA (Io), Any Speed
Peak Reverse Current
500nA
Max Surge Current
2A
Montaj
Surface Mount
Nem Hassasiyeti (MSL)
1 (Unlimited)
Forward Current
300mA
Element Configuration
Common Cathode
Kılıf / Paket
SC-74A, SOT-753
RoHS Durumu
RoHS Compliant
Average Rectified Current
100mA
Reverse Voltage
85V
Diode Type
Standard
Fabrika Tedarik Süresi
12 Weeks
Max Repetitive Reverse Voltage Vrrm
85V
Maks. Çalışma Sıcaklığı
125°C
Current Reverse Leakage Vr
500nA @ 80V
Voltage Forward Vf Max If
1.2V @ 100mA
Power Dissipation Max
0.2W
Montaj Tipi
Surface Mount
Contact Plating
Copper, Silver, Tin
Ambalaj
Tape & Reel (TR)
Reverse Recovery Time
4 ns
Diode Configuration
4 Common Cathode

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