TPH4R50ANH,LQ(M1

Specifications

Terminal Pozisyonu

DUAL

Part Life Cycle Code

Active

Configuration

SINGLE WITH BUILT-IN DIODE

Power Dissipationmax Abs

78 W

Operating Temperaturemax

150 °C

Drain Currentmax Id

60 A

REACH Uyumluluk Kodu

unknown

Drainsource On Resistancemax

0.0045 Ω

Feedback Capmax Crss

63 pF

Jesd30 Code

S-PDSO-F8

ECCN Kodu

EAR99

Yüzey Montaj

YES

Avalanche Energy Rating Eas

274 mJ

Transistor Element Material

SILICON

Package Body Material

PLASTIC/EPOXY

Number Of Terminals

8

Pulsed Drain Currentmax Idm

200 A

Terminal Formu

FLAT

Polaritychannel Type

N-CHANNEL

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Package Style

SMALL OUTLINE

Case Connection

DRAIN

Ihs Manufacturer

TOSHIBA CORP

Number Of Elements

1

Ds Breakdown Voltagemin

100 V

Package Description

,

Transistor Application

SWITCHING

Package Shape

SQUARE

Operating Mode

ENHANCEMENT MODE