TK8P60W

Specifications

Transistor Element Material

SILICON

Ihs Manufacturer

TOSHIBA CORP

Operating Temperaturemax

150 °C

Drain Currentmax Id

8 A

Polaritychannel Type

N-CHANNEL

Operating Mode

ENHANCEMENT MODE

Drainsource On Resistancemax

0.5 Ω

Package Description

SMALL OUTLINE, R-PSSO-G2

Package Style

SMALL OUTLINE

Avalanche Energy Rating Eas

105 mJ

Case Connection

DRAIN

Package Body Material

PLASTIC/EPOXY

Jesd30 Code

R-PSSO-G2

Pulsed Drain Currentmax Idm

32 A

Exterior Housing Material

1

REACH Uyumluluk Kodu

unknown

Ds Breakdown Voltagemin

600 V

ECCN Kodu

EAR99

Number Of Terminals

2

Terminal Pozisyonu

SINGLE

Part Life Cycle Code

Active

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Transistor Application

SWITCHING

Configuration

SINGLE WITH BUILT-IN DIODE

Yüzey Montaj

YES

Package Shape

RECTANGULAR

Power Dissipationmax Abs

80 W

Terminal Formu

GULL WING