TK7Q65W

Specifications

Transistor Element Material

SILICON

Ihs Manufacturer

TOSHIBA CORP

Drain Currentmax Id

6.8 A

Polaritychannel Type

N-CHANNEL

Operating Mode

ENHANCEMENT MODE

Drainsource On Resistancemax

0.8 Ω

Package Description

IN-LINE, R-PSIP-T3

Package Style

IN-LINE

Avalanche Energy Rating Eas

90 mJ

Case Connection

DRAIN

Package Body Material

PLASTIC/EPOXY

Jesd30 Code

R-PSIP-T3

Pulsed Drain Currentmax Idm

27.2 A

REACH Uyumluluk Kodu

unknown

Ds Breakdown Voltagemin

650 V

ECCN Kodu

EAR99

Number Of Elements

1

Number Of Terminals

3

Terminal Pozisyonu

SINGLE

Part Life Cycle Code

Active

Transistor Application

SWITCHING

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Configuration

SINGLE WITH BUILT-IN DIODE

Yüzey Montaj

NO

Package Shape

RECTANGULAR

Terminal Formu

THROUGH-HOLE