TK12J55D

Specifications

Drainsource On Resistancemax

0.57 Ω

Configuration

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating Eas

317 mJ

Number Of Elements

1

Operating Mode

ENHANCEMENT MODE

Jesd30 Code

R-PSFM-T3

Part Package Code

SC-65

Part Life Cycle Code

Active

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Operating Temperaturemax

150 °C

REACH Uyumluluk Kodu

unknown

Package Style

FLANGE MOUNT

Terminal Pozisyonu

SINGLE

Power Dissipationmax Abs

190 W

Terminal Formu

THROUGH-HOLE

Package Description

FLANGE MOUNT, R-PSFM-T3

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Polaritychannel Type

N-CHANNEL

Yüzey Montaj

NO

Pulsed Drain Currentmax Idm

48 A

Ds Breakdown Voltagemin

550 V

Transistor Application

SWITCHING

Case Connection

DRAIN

Drain Currentmax Id

12 A

Rohs Code

Yes

Ihs Manufacturer

TOSHIBA CORP

Pin Sayısı

3

Package Shape

RECTANGULAR

Package Body Material

PLASTIC/EPOXY

Number Of Terminals

3