TJ15S10M3

Specifications

Reference Standard

AEC-Q101

Feedback Capmax Crss

135 pF

Ihs Manufacturer

TOSHIBA CORP

Operating Temperaturemax

175 °C

Terminal Pozisyonu

SINGLE

Drainsource On Resistancemax

0.13 Ω

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Pulsed Drain Currentmax Idm

30 A

Transistor Element Material

SILICON

Power Dissipationmax Abs

75 W

Package Body Material

PLASTIC/EPOXY

Terminal Formu

GULL WING

Avalanche Energy Rating Eas

29.3 mJ

Polaritychannel Type

P-CHANNEL

Operating Mode

ENHANCEMENT MODE

Package Style

SMALL OUTLINE

Yüzey Montaj

YES

Part Life Cycle Code

Active

Ds Breakdown Voltagemin

100 V

Number Of Terminals

2

Package Description

,

Drain Currentmax Id

15 A

REACH Uyumluluk Kodu

unknown

Number Of Elements

1

Jesd30 Code

R-PSSO-G2

Configuration

SINGLE WITH BUILT-IN DIODE

Package Shape

RECTANGULAR

ECCN Kodu

EAR99

Transistor Application

SWITCHING

Case Connection

DRAIN