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TRS3E65F,S1Q

Toshiba

TRS3E65F,S1Q

RF Diodes

RoHS: Compliant

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RoHS

Compliant

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Specifications

Current Reverse Leakage Vr
20 µA @ 650 V
Current Average Rectified Io
3A
Tip
Schottky Diode
Ürün Durumu
Active
Paket
Tube
Package Height
9.08
If Forward Current
3 A
Mounting
Through Hole
Configuration
Single
Eccn Us
EAR99
Operating Temperature Junction
175°C (Max)
Pcb Changed
2
Speed
No Recovery Time > 500mA (Io)
Material
SiC
Maximum Continuous Forward Current A
3
Peak Nonrepetitive Surge Current A
27
Vf Forward Voltage
1.45 V
Vr Reverse Voltage
650 V
Minimum Operating Temperature C
-55
Package Length
10.05
Vrrm Repetitive Reverse Voltage
650 V
Pin Sayısı
2
Ir Reverse Current
200 nA
RoHS
Details
Maximum Operating Temperature C
175
Ifsm Forward Surge Current
27 A
Technology
SiC
RoHS Durumu
RoHS Compliant
Montaj Tipi
Through Hole
Ambalaj
Tube
Capacitance Vr F
12pF @ 650V, 1MHz
Peak Reverse Repetitive Voltage V
650
Diode Type
Silicon Carbide Schottky
Montaj Stili
Through Hole
Military
No
Maks. Çalışma Sıcaklığı
+ 175 C
Supplier Package
TO-220
Reverse Recovery Time Trr
0 ns
Fabrika Paket Adedi
50
Ürün Tipi
Schottky Diodes & Rectifiers

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