TK25A10K3,S5Q(J

Specifications

Maximum Continuous Drain Current A

25

Channel Mode

Enhancement

Typical Gate Charge Vgs Nc

34@10V

Typical Rise Time Ns

13

Maximum Drain Source Resistance Mohm

40@10V

Typical Fall Time Ns

8

Configuration

Single

Maximum Gate Source Leakage Current Na

100

Maximum Gate Threshold Voltage V

4

Process Technology

U-MOS IV

Channel Type

N

Category

Power MOSFET

Minimum Operating Temperature C

-55

Number Of Elements Per Chip

1

Ambalaj

Tube

Maximum Power Dissipation Mw

25000

Typical Input Capacitance Vds Pf

1580@10V

Maximum Idss Ua

10

Typical Gate Charge10v Nc

34

Maximum Drain Source Voltage V

100

Material

Si

Maximum Operating Temperature C

150

Maximum Gate Source Voltage V

±20