TK13A65D,S5Q(J)

Specifications

Maximum Continuous Drain Current A

13

Channel Mode

Enhancement

Drainsource Onvolt

650(V)

Operating Temp Range

-55C to 150C

Maximum Drain Source Resistance Mohm

470@10V

Typical Gate Charge Vgs Nc

45@10V

Configuration

Single

Continuous Drain Current

13(A)

Pcb Changed

3

Number Of Elements

1

Operating Temperature Classification

Military

Maximum Gate Threshold Voltage V

4

Gatesource Voltage Max

±30(V)

Polarity

N

Minimum Operating Temperature C

-55

Maximum Power Dissipation Mw

50000

Number Of Elements Per Chip

1

Ambalaj

Tube

Typical Input Capacitance Vds Pf

2600@25V

Maximum Drain Source Voltage V

650

Maximum Idss Ua

10

Package Width

4.5

Maximum Operating Temperature C

150

Package Height

15

Mounting

Through Hole

Package Length

10

Typical Rise Time Ns

50

Typical Fall Time Ns

25

Tab

Tab

Maximum Gate Source Leakage Current Na

1000

Tip

Power MOSFET

Process Technology

pi-MOS VII

Channel Type

N

Category

Power MOSFET

Eccn Us

EAR99

Supplier Package

TO-220SIS

Rad Hardened

No

Package Type

TO-220SIS

Ppap

No

Typical Gate Charge10v Nc

45