Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Type
- 2 P-Channel (Dual)
- Thickness
- 1.58mm
- Pin Sayısı
- 8
- Additional Feature
- LOGIC LEVEL COMPATIBLE, ESD PROTECTED
- Gate To Source Voltage Vgs
- 2V
- RoHS Durumu
- ROHS3 Compliant
- Radyasyon Dayanımı
- No
- Montaj
- Surface Mount
- Transistor Element Material
- SILICON
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Vgsth Max Id
- 1.5V @ 250μA
- Kurşunsuz
- Lead Free
- Fabrika Tedarik Süresi
- 6 Weeks
- Akım Değeri
- -1.17A
- Number Of Elements
- 2
- Contact Plating
- Gold
- Kurşunsuz Kodu
- yes
- Parça Durumu
- Active
- Turn Off Delay Time
- 13 ns
- Max Power Dissipation
- 840mW
- Transistor Application
- SWITCHING
- Terminal Formu
- GULL WING
- Lifecycle Status
- ACTIVE (Last Updated: 5 days ago)
- Çalışma Sıcaklığı
- -40°C~150°C TJ
- Fall Time Typ
- 10 ns
- Genişlik
- 3.91mm
- Continuous Drain Current Id
- 1.17A
- Uzunluk
- 4.9mm
- JESD-609 Kodu
- e4
- ECCN Kodu
- EAR99
- Tepe Reflow Sıcaklığı (°C)
- 260
- Yükseklik
- 1.75mm
- Drainsource On Resistancemax
- 0.4Ohm
- Power Dissipation
- 840mW
- Rds On Max Id Vgs
- 180m Ω @ 1.5A, 10V
- Ambalaj
- Cut Tape (CT)
- Gate Charge Qg Max Vgs
- 5.45nC @ 10V
- Fet Feature
- Logic Level Gate
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Operating Mode
- ENHANCEMENT MODE
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