Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Terminal Pozisyonu
- DUAL
- Rise Time
- 10ns
- Transistor Application
- SWITCHING
- Drain To Source Voltage Vdss
- -15V
- Terminal Formu
- GULL WING
- Terminal Sayısı
- 8
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Maks. Çalışma Sıcaklığı
- 125°C
- Number Of Elements
- 2
- Operating Mode
- ENHANCEMENT MODE
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Turn On Delay Time
- 4.5 ns
- Turn Off Delay Time
- 13 ns
- Power Dissipation Max
- 840mW
- Drain To Source Breakdown Voltage
- 15V
- Fall Time Typ
- 10 ns
- Genişlik
- 3.91mm
- Drain To Source Resistance
- 180mOhm
- Continuous Drain Current Id
- 1.17A
- Pin Sayısı
- 8
- Polaritychannel Type
- P-CHANNEL
- JESD-609 Kodu
- e4
- ECCN Kodu
- EAR99
- Tepe Reflow Sıcaklığı (°C)
- 260
- Yükseklik
- 1.58mm
- Pin Sayısı
- 8
- Additional Feature
- LOGIC LEVEL COMPATIBLE, ESD PROTECTED
- Gate To Source Voltage Vgs
- 2V
- RoHS Durumu
- RoHS Compliant
- Rds On Max
- 180 mΩ
- Uzunluk
- 4.9mm
- Min. Çalışma Sıcaklığı
- -40°C
- Kılıf / Paket
- SOIC
- Kurşunsuz
- Lead Free
- Power Dissipation
- 840mW
- Radyasyon Dayanımı
- No
- Terminal Kaplaması
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Montaj
- Surface Mount
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