Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- JESD-609 Kodu
- e4
- Tepe Reflow Sıcaklığı (°C)
- 260
- ECCN Kodu
- EAR99
- Drainsource On Resistancemax
- 0.4Ohm
- Yükseklik
- 1.75mm
- Uzunluk
- 4.9mm
- Reach Svhc
- No SVHC
- Gate Charge Qg Max Vgs
- 5.45nC @ 10V
- Ambalaj
- Tube
- Fet Feature
- Logic Level Gate
- Threshold Voltage
- -1.25V
- Power Dissipation
- 840mW
- Rds On Max Id Vgs
- 180m Ω @ 1.5A, 10V
- Rise Time
- 10ns
- Terminal Sayısı
- 8
- Operating Mode
- ENHANCEMENT MODE
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Turn On Delay Time
- 4.5 ns
- Drain To Source Breakdown Voltage
- 15V
- Montaj Tipi
- Surface Mount
- Pin Sayısı
- 8
- Voltage Rated Dc
- -15V
- Temel Parça No
- TPS1120
- Pin Sayısı
- 8
- Fet Type
- 2 P-Channel (Dual)
- Thickness
- 1.58mm
- RoHS Durumu
- ROHS3 Compliant
- Gate To Source Voltage Vgs
- 2V
- Additional Feature
- LOGIC LEVEL COMPATIBLE, ESD PROTECTED
- Transistor Element Material
- SILICON
- Kurşunsuz
- Lead Free
- Fabrika Tedarik Süresi
- 12 Weeks
- Akım Değeri
- -1.7A
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Vgsth Max Id
- 1.5V @ 250μA
- Terminal Kaplaması
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Radyasyon Dayanımı
- No
- Montaj
- Surface Mount
- Max Power Dissipation
- 840mW
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