TPS1120D

Specifications

JESD-609 Kodu

e4

Tepe Reflow Sıcaklığı (°C)

260

ECCN Kodu

EAR99

Drainsource On Resistancemax

0.4Ohm

Yükseklik

1.75mm

Uzunluk

4.9mm

Reach Svhc

No SVHC

Gate Charge Qg Max Vgs

5.45nC @ 10V

Ambalaj

Tube

Fet Feature

Logic Level Gate

Threshold Voltage

-1.25V

Power Dissipation

840mW

Rds On Max Id Vgs

180m Ω @ 1.5A, 10V

Rise Time

10ns

Terminal Sayısı

8

Operating Mode

ENHANCEMENT MODE

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Nem Hassasiyeti (MSL)

1 (Unlimited)

Turn On Delay Time

4.5 ns

Drain To Source Breakdown Voltage

15V

Montaj Tipi

Surface Mount

Pin Sayısı

8

Voltage Rated Dc

-15V

Temel Parça No

TPS1120

Pin Sayısı

8

Fet Type

2 P-Channel (Dual)

Thickness

1.58mm

RoHS Durumu

ROHS3 Compliant

Gate To Source Voltage Vgs

2V

Additional Feature

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

Transistor Element Material

SILICON

Kurşunsuz

Lead Free

Fabrika Tedarik Süresi

12 Weeks

Akım Değeri

-1.7A

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Vgsth Max Id

1.5V @ 250μA

Terminal Kaplaması

Nickel/Palladium/Gold (Ni/Pd/Au)

Radyasyon Dayanımı

No

Montaj

Surface Mount

Max Power Dissipation

840mW