Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Contact Plating
- Gold
- Montaj
- Surface Mount
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Rise Time
- 9ns
- Uzunluk
- 4.9mm
- Continuous Drain Current Id
- 15A
- Terminal Formu
- GULL WING
- Gate Charge Qg Max Vgs
- 9.4nC @ 10V
- Operating Mode
- ENHANCEMENT MODE
- Radyasyon Dayanımı
- No
- Max Power Dissipation
- 2.1W
- Fabrika Tedarik Süresi
- 6 Weeks
- ECCN Kodu
- EAR99
- Kurşunsuz Kodu
- yes
- Additional Feature
- AVALANCHE RATED
- Transistor Application
- SWITCHING
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Genişlik
- 3.91mm
- Fall Time Typ
- 4 ns
- Rds On Max Id Vgs
- 28m Ω @ 5A, 10V
- Reach Svhc
- No SVHC
- JESD-609 Kodu
- e4
- Turn Off Delay Time
- 5 ns
- Fet Type
- 2 N-Channel (Dual)
- Number Of Elements
- 2
- Turn On Delay Time
- 6 ns
- Pulsed Drain Currentmax Idm
- 46A
- Temel Parça No
- CSD88539
- Yükseklik
- 1.75mm
- Parça Durumu
- Active
- Tepe Reflow Sıcaklığı (°C)
- 260
- Terminal Sayısı
- 8
- Weight
- 540.001716mg
- Drain To Source Voltage Vdss
- 60V
- Fet Feature
- Standard
- Drain Currentmax Abs Id
- 6.3A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Drain To Source Breakdown Voltage
- 60V
- Gate To Source Voltage Vgs
- 20V
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