Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Pin Sayısı
- 8
- Threshold Voltage
- 3V
- Seri
- NexFET™
- Drainsource On Resistancemax
- 0.019Ohm
- Montaj Tipi
- Surface Mount
- Power Dissipation
- 2.1W
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Element Configuration
- Dual
- Thickness
- 1.58mm
- Input Capacitance Ciss Max Vds
- 1400pF @ 30V
- Lifecycle Status
- ACTIVE (Last Updated: 4 days ago)
- Gate To Source Voltage Vgs
- 20V
- Vgsth Max Id
- 3.6V @ 250μA
- Kurşunsuz
- Lead Free
- RoHS Durumu
- ROHS3 Compliant
- Ambalaj
- Tape & Reel (TR)
- Parça Durumu
- Active
- Tepe Reflow Sıcaklığı (°C)
- 260
- Weight
- 540.001716mg
- Terminal Sayısı
- 8
- Fet Feature
- Standard
- Drain Currentmax Abs Id
- 8A
- Drain To Source Breakdown Voltage
- 60V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fet Type
- 2 N-Channel (Dual)
- Number Of Elements
- 2
- Turn On Delay Time
- 6 ns
- Temel Parça No
- CSD88537
- Yükseklik
- 1.75mm
- Fall Time Typ
- 19 ns
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Genişlik
- 3.91mm
- Rds On Max Id Vgs
- 15m Ω @ 8A, 10V
- Reach Svhc
- No SVHC
- Number Of Channels
- 2
- Turn Off Delay Time
- 5 ns
- JESD-609 Kodu
- e4
- Max Junction Temperature Tj
- 150°C
- Operating Mode
- ENHANCEMENT MODE
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