Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Tepe Reflow Sıcaklığı (°C)
- 260
- Terminal Sayısı
- 8
- Weight
- 540.001716mg
- Parça Durumu
- Active
- Drain Currentmax Abs Id
- 8A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Drain To Source Breakdown Voltage
- 60V
- Drain To Source Voltage Vdss
- 60V
- Fet Feature
- Standard
- Gate To Source Voltage Vgs
- 20V
- Lifecycle Status
- ACTIVE (Last Updated: 4 days ago)
- Input Capacitance Ciss Max Vds
- 1400pF @ 30V
- Ambalaj
- Tape & Reel (TR)
- Kurşunsuz
- Lead Free
- RoHS Durumu
- ROHS3 Compliant
- Vgsth Max Id
- 3.6V @ 250μA
- Power Dissipation
- 2.1W
- Element Configuration
- Dual
- Thickness
- 1.58mm
- Transistor Element Material
- SILICON
- Seri
- NexFET™
- Drainsource On Resistancemax
- 0.019Ohm
- Montaj Tipi
- Surface Mount
- Threshold Voltage
- 3V
- Pin Sayısı
- 8
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Contact Plating
- Gold
- Montaj
- Surface Mount
- Terminal Formu
- GULL WING
- Rise Time
- 15ns
- Uzunluk
- 4.9mm
- Continuous Drain Current Id
- 15A
- Radyasyon Dayanımı
- No
- Max Power Dissipation
- 2.1W
- Gate Charge Qg Max Vgs
- 18nC @ 10V
- Operating Mode
- ENHANCEMENT MODE
- Transistor Application
- SWITCHING
- Kurşunsuz Kodu
- yes
- ECCN Kodu
- EAR99
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