CSD87503Q3ET

Specifications

Terminal Formu

NO LEAD

Drain Currentmax Abs Id

10A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Uzunluk

3.3mm

Fet Feature

Standard

Drain To Source Voltage Vdss

30V

Power Max

15.6W

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Sıcaklığı (°C)

260

Terminal Sayısı

6

Çalışma Sıcaklığı

-55°C~150°C TJ

Parça Durumu

Active

Ambalaj

Tape & Reel (TR)

Current Continuous Drain Id25

10A Ta

Yüzey Montaj

YES

Transistor Application

SWITCHING

RoHS Durumu

ROHS3 Compliant

Feedback Capmax Crss

194 pF

Kurşunsuz Kodu

yes

Fabrika Tedarik Süresi

12 Weeks

Vgsth Max Id

2.1V @ 250μA

Drain To Source Resistance

13.5mOhm

Gate Charge Qg Max Vgs

17.4nC @ 4.5V

Operating Mode

ENHANCEMENT MODE

Lifecycle Status

ACTIVE (Last Updated: 4 days ago)

Input Capacitance Ciss Max Vds

1020pF @ 15V

Case Connection

DRAIN

Thickness

1mm

JESD-609 Kodu

e4

Kılıf / Paket

8-PowerVDFN

Genişlik

3.3mm

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Kaplaması

Nickel/Palladium/Gold (Ni/Pd/Au)

Montaj Tipi

Surface Mount

Seri

NexFET™

Temel Parça No

CSD87503

Configuration

COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

Pin Sayısı

8

Transistor Element Material

SILICON

Number Of Elements

2