CSD87503Q3E

Specifications

Parça Durumu

Active

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Sayısı

6

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Sıcaklığı (°C)

260

Power Max

15.6W

Fet Feature

Standard

Drain To Source Voltage Vdss

30V

Uzunluk

3.3mm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain Currentmax Abs Id

10A

Terminal Formu

NO LEAD

Lifecycle Status

ACTIVE (Last Updated: 4 days ago)

Input Capacitance Ciss Max Vds

1020pF @ 15V

Operating Mode

ENHANCEMENT MODE

Gate Charge Qg Max Vgs

17.4nC @ 4.5V

Vgsth Max Id

2.1V @ 250μA

Fabrika Tedarik Süresi

6 Weeks

ECCN Kodu

EAR99

Kurşunsuz Kodu

yes

RoHS Durumu

ROHS3 Compliant

Feedback Capmax Crss

194 pF

Transistor Application

SWITCHING

Yüzey Montaj

YES

Current Continuous Drain Id25

10A Ta

Ambalaj

Tape & Reel (TR)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Genişlik

3.3mm

Kılıf / Paket

8-PowerVDFN

Rds On Max Id Vgs

13.5m Ω @ 6A, 10V

JESD-609 Kodu

e4

Thickness

1mm

Case Connection

DRAIN

Fet Type

2 N-Channel (Dual) Common Source

Ds Breakdown Voltagemin

30V

Number Of Elements

2

Transistor Element Material

SILICON

Pin Sayısı

8

Temel Parça No

CSD87503

Configuration

COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE