Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Number Of Elements
- 2
- Fet Type
- 2 N-Channel (Dual) Common Drain
- Seri
- NexFET™
- Montaj Tipi
- Surface Mount
- Configuration
- COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
- Temel Parça No
- CSD87313
- Pin Sayısı
- 8
- Kılıf / Paket
- 8-PowerWDFN
- Avalanche Energy Rating Eas
- 67 mJ
- Genişlik
- 3.3mm
- Case Connection
- SOURCE
- Thickness
- 750μm
- Drain To Source Resistance
- 5.5mOhm
- Gate Charge Qg Max Vgs
- 28nC @ 4.5V
- Operating Mode
- ENHANCEMENT MODE
- Lifecycle Status
- ACTIVE (Last Updated: 2 days ago)
- Input Capacitance Ciss Max Vds
- 4290pF @ 15V
- Ambalaj
- Tape & Reel (TR)
- Yüzey Montaj
- YES
- Transistor Application
- SWITCHING
- RoHS Durumu
- ROHS3 Compliant
- Feedback Capmax Crss
- 200 pF
- Fabrika Tedarik Süresi
- 6 Weeks
- Kurşunsuz Kodu
- yes
- Vgsth Max Id
- 1.2V @ 250μA
- Additional Feature
- AVALANCHE RATED
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Terminal Sayısı
- 6
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Parça Durumu
- Active
- Terminal Formu
- NO LEAD
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Uzunluk
- 3.3mm
- Fet Feature
- Standard
- Drain To Source Voltage Vdss
- 30V
- Power Max
- 2.7W
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