CSD87312Q3E

Specifications

Max Power Dissipation

2.5W

Gate Charge Qg Max Vgs

8.2nC @ 4.5V

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Fabrika Tedarik Süresi

6 Weeks

ECCN Kodu

EAR99

Kurşunsuz Kodu

yes

Additional Feature

AVALANCHE RATED, ULTRA-LOW RESISTANCE

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Çalışma Sıcaklığı

-55°C~150°C TJ

Contact Plating

Gold

Montaj

Surface Mount

Terminal Formu

NO LEAD

Uzunluk

3.3mm

Rise Time

16ns

Continuous Drain Current Id

27A

Number Of Elements

2

Turn On Delay Time

7.8 ns

Pulsed Drain Currentmax Idm

45A

Fet Type

2 N-Channel (Dual) Common Source

Temel Parça No

CSD87312

Rds On Max Id Vgs

33m Ω @ 7A , 8V

Kılıf / Paket

8-PowerTDFN

Genişlik

3.3mm

Fall Time Typ

2.8 ns

JESD-609 Kodu

e4

Turn Off Delay Time

17 ns

Gate To Source Voltage Vgs

10V

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Input Capacitance Ciss Max Vds

1250pF @ 15V

Ambalaj

Cut Tape (CT)

Kurşunsuz

Contains Lead

Feedback Capmax Crss

16 pF

RoHS Durumu

ROHS3 Compliant

Vgsth Max Id

1.3V @ 250μA

Tepe Reflow Sıcaklığı (°C)

260

Terminal Sayısı

7

Parça Durumu

Active

Drain To Source Breakdown Voltage

30V

Nem Hassasiyeti (MSL)

1 (Unlimited)