Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Parça Durumu
- Active
- Terminal Sayısı
- 4
- Tepe Reflow Sıcaklığı (°C)
- 260
- Drain To Source Voltage Vdss
- 20V
- Fet Feature
- Logic Level Gate, 5V Drive
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Drain To Source Breakdown Voltage
- 20V
- Input Capacitance Ciss Max Vds
- 2390pF @ 10V
- Lifecycle Status
- ACTIVE (Last Updated: 5 days ago)
- Gate To Source Voltage Vgs
- 10V
- Vgsth Max Id
- 1.4V @ 250μA
- RoHS Durumu
- ROHS3 Compliant
- Feedback Capmax Crss
- 40 pF
- Kurşunsuz
- Contains Lead
- Ambalaj
- Tape & Reel (TR)
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Power Dissipation
- 2.5W
- Thickness
- 900μm
- Transistor Element Material
- SILICON
- Pin Sayısı
- 8
- Montaj Tipi
- Surface Mount
- Seri
- NexFET™
- Montaj
- Surface Mount
- Contact Plating
- Gold
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Continuous Drain Current Id
- 39A
- Rise Time
- 27ns
- Uzunluk
- 3.3mm
- Terminal Formu
- NO LEAD
- Operating Mode
- ENHANCEMENT MODE
- Gate Charge Qg Max Vgs
- 15.2nC @ 4.5V
- Max Power Dissipation
- 2.5W
- Additional Feature
- AVALANCHE RATED
- Fabrika Tedarik Süresi
- 8 Weeks
- ECCN Kodu
- EAR99
- Kurşunsuz Kodu
- yes
- Transistor Application
- SWITCHING
- Fall Time Typ
- 6 ns
- Genişlik
- 3.3mm
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