Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Seri
- NexFET™
- Drainsource On Resistancemax
- 0.039Ohm
- Montaj Tipi
- Surface Mount
- Pin Sayısı
- 6
- Threshold Voltage
- 900mV
- Transistor Element Material
- SILICON
- Case Connection
- DRAIN
- Thickness
- 750μm
- Element Configuration
- Dual
- Avalanche Energy Rating Eas
- 3.8 mJ
- Kurşunsuz
- Lead Free
- RoHS Durumu
- ROHS3 Compliant
- Ambalaj
- Tape & Reel (TR)
- Vgsth Max Id
- 1.2V @ 250μA
- Lifecycle Status
- ACTIVE (Last Updated: 2 days ago)
- Input Capacitance Ciss Max Vds
- 469pF @ 10V
- Gate To Source Voltage Vgs
- 10V
- Drain Currentmax Abs Id
- 5A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Drain To Source Breakdown Voltage
- 20V
- Drain To Source Voltage Vdss
- 20V
- Fet Feature
- Logic Level Gate, 5V Drive
- Terminal Sayısı
- 6
- Weight
- 9.695537mg
- Parça Durumu
- Active
- Temel Parça No
- CSD85301
- Number Of Elements
- 2
- Turn On Delay Time
- 6 ns
- Fet Type
- 2 N-Channel (Dual)
- Turn Off Delay Time
- 14 ns
- JESD-609 Kodu
- e3
- Rds On Max Id Vgs
- 27m Ω @ 5A, 4.5V
- Number Of Channels
- 2
- Reach Svhc
- No SVHC
- Fall Time Typ
- 15 ns
- Kılıf / Paket
- 6-WDFN Exposed Pad
- Genişlik
- 2mm
- Transistor Application
- SWITCHING
- Additional Feature
- AVALANCHE RATED
- Fabrika Tedarik Süresi
- 12 Weeks
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