Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Tepe Reflow Sıcaklığı (°C)
- 260
- Terminal Sayısı
- 6
- Montaj
- Surface Mount
- Parça Durumu
- Active
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Formu
- NO LEAD
- Rise Time
- 353ns
- Uzunluk
- 1.11mm
- Fet Feature
- Standard
- Continuous Drain Current Id
- 8A
- Drain To Source Voltage Vdss
- 12V
- Max Power Dissipation
- 2.3W
- Operating Mode
- ENHANCEMENT MODE
- Lifecycle Status
- ACTIVE (Last Updated: 5 days ago)
- Gate Charge Qg Max Vgs
- 10.9nC @ 4.5V
- Gate To Source Voltage Vgs
- 10V
- Kurşunsuz
- Lead Free
- Transistor Application
- SWITCHING
- RoHS Durumu
- ROHS3 Compliant
- Feedback Capmax Crss
- 144 pF
- Ambalaj
- Tape & Reel (TR)
- Fabrika Tedarik Süresi
- 6 Weeks
- Kurşunsuz Kodu
- yes
- ECCN Kodu
- EAR99
- Vgsth Max Id
- 1.25V @ 250μA
- Terminal Pozisyonu
- BOTTOM
- Fall Time Typ
- 589 ns
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Element Configuration
- Dual
- Kılıf / Paket
- 6-XFBGA
- Genişlik
- 2.16mm
- Turn Off Delay Time
- 711 ns
- Thickness
- 200μm
- Transistor Element Material
- SILICON
- Number Of Elements
- 2
- Turn On Delay Time
- 205 ns
- Fet Type
- 2 N-Channel (Dual) Common Drain
- Seri
- NexFET™
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