Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Radyasyon Dayanımı
- No
- Max Power Dissipation
- 800mW
- Gate Charge Qg Max Vgs
- 2.1nC @ 4.5V
- Gate To Source Voltage Vgs
- 8V
- Operating Mode
- ENHANCEMENT MODE
- Input Capacitance Ciss Max Vds
- 195pF @ 10V
- Ambalaj
- Tape & Reel (TR)
- Transistor Application
- SWITCHING
- Kurşunsuz
- Lead Free
- Feedback Capmax Crss
- 31 pF
- RoHS Durumu
- ROHS3 Compliant
- ECCN Kodu
- EAR99
- Kurşunsuz Kodu
- yes
- Vgsth Max Id
- 1V @ 250μA
- Nominal Vgs
- -700 mV
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Tepe Reflow Sıcaklığı (°C)
- 260
- Terminal Sayısı
- 6
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Parça Durumu
- Obsolete
- Montaj
- Surface Mount
- Terminal Formu
- BALL
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Drain To Source Breakdown Voltage
- 20V
- Rise Time
- 1.7ns
- Fet Feature
- Logic Level Gate
- Continuous Drain Current Id
- 1.2A
- Drain To Source Voltage Vdss
- 20V
- Transistor Element Material
- SILICON
- Number Of Elements
- 2
- Turn On Delay Time
- 3 ns
- Fet Type
- 2 P-Channel (Dual)
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Drainsource On Resistancemax
- 0.19Ohm
- Seri
- NexFET™
- Montaj Tipi
- Surface Mount
- Threshold Voltage
- -700mV
- Temel Parça No
- CSD75301
- Pin Sayısı
- 6
- Rds On Max Id Vgs
- 100m Ω @ 1A, 4.5V
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