Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Terminal Sayısı
- 9
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Montaj
- Surface Mount
- Parça Durumu
- Obsolete
- Drain To Source Breakdown Voltage
- -20V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Drain Currentmax Abs Id
- 3A
- Terminal Formu
- BALL
- Fet Feature
- Logic Level Gate
- Continuous Drain Current Id
- -3A
- Drain To Source Voltage Vdss
- 20V
- Rise Time
- 6.7ns
- Max Power Dissipation
- 700mW
- Radyasyon Dayanımı
- No
- Drain To Source Resistance
- 80mOhm
- Input Capacitance Ciss Max Vds
- 410pF @ 10V
- Operating Mode
- ENHANCEMENT MODE
- Gate Charge Qg Max Vgs
- 3.9nC @ 4.5V
- Gate To Source Voltage Vgs
- -6V
- RoHS Durumu
- ROHS3 Compliant
- Feedback Capmax Crss
- 55 pF
- Kurşunsuz
- Contains Lead
- Transistor Application
- SWITCHING
- Ambalaj
- Tape & Reel (TR)
- Current Continuous Drain Id25
- 3A
- Nominal Vgs
- -700 mV
- Vgsth Max Id
- 900mV @ 250μA
- Kurşunsuz Kodu
- no
- Terminal Pozisyonu
- BOTTOM
- Reach Svhc
- No SVHC
- Element Configuration
- Dual
- Fall Time Typ
- 26 ns
- Power Dissipation
- 700mW
- Kılıf / Paket
- 9-UFBGA, DSBGA
- Pin Sayısı
- 9
- Turn Off Delay Time
- 45 ns
- Number Of Elements
- 2
- Turn On Delay Time
- 7.8 ns
- Transistor Element Material
- SILICON
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