S886TR-GS08

Specifications

Power Gainmin Gp

17.5 dB

Yüzey Montaj

YES

Operating Mode

DUAL GATE, DEPLETION MODE

Terminal Pozisyonu

DUAL

Highest Frequency Band

ULTRA HIGH FREQUENCY BAND

Number Of Elements

1

Number Of Terminals

4

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Part Life Cycle Code

Transferred

Jesd30 Code

R-PDSO-G4

Polaritychannel Type

N-CHANNEL

Configuration

SINGLE WITH BUILT-IN DIODE

ECCN Kodu

EAR99

Package Shape

RECTANGULAR

Drain Currentmax Id

0.03 A

Transistor Element Material

SILICON

Terminal Formu

GULL WING

Case Connection

SOURCE

Package Body Material

PLASTIC/EPOXY

Transistor Application

AMPLIFIER

Qualification Status

Not Qualified

Ihs Manufacturer

TEMIC SEMICONDUCTORS

Ds Breakdown Voltagemin

16 V

Package Style

SMALL OUTLINE

REACH Uyumluluk Kodu

unknown