Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Max Frequency
- 12 GHz
- Kılıf / Paket
- TO-220-3
- Ambalaj
- Tube
- Seri
- FQPF9N50C
- Pd Power Dissipation
- 44 W
- Configuration
- Single
- Minimum Operating Temperature
- - 55 C
- Fabrika Paket Adedi
- 1000
- Id Continuous Drain Current
- 9 A
- Transistor Polarity
- N-Channel
- RoHS
- Details
- Vgs Th Gatesource Threshold Voltage
- 4 V
- Birim Ağırlık
- 0.068784 oz
- Part Aliases
- FQPF9N50C_NL
- Channel Mode
- Enhancement
- Typical Turnoff Delay Time
- 93 ns
- Rise Time
- 65 ns
- Technology
- Si
- Ürün Tipi
- MOSFET
- Number Of Channels
- 1 Channel
- Rds On Drainsource Resistance
- 800 mOhms
- Genişlik
- 4.7 mm
- Yükseklik
- 16.3 mm
- Qg Gate Charge
- 28 nC
- Transistor Type
- 1 N-Channel
- Vds Drainsource Breakdown Voltage
- 500 V
- Maks. Çalışma Sıcaklığı
- + 150 C
- Tip
- MOSFET
- Montaj Stili
- Through Hole
- Typical Turnon Delay Time
- 18 ns
- Vgs Gatesource Voltage
- - 30 V, + 30 V
- Uzunluk
- 10.67 mm
- Forward Transconductance Min
- 6.5 S
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